239000004065 semiconductor Substances 0.000 claims description 64.238000004519 manufacturing process Methods 0.000 claims abstract description 27.239000000758 substrate Substances 0.000 claims abstract description 31.229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 35.239000002184 metal Substances 0.000 claims abstract description 42.229910052751 metal Inorganic materials 0.000 claims abstract description 42.Assignors: CUNNINGHAM, SHAUN JOSEPH Publication of US20060284282A1 publication Critical patent/US20060284282A1/en Status Abandoned legal-status Critical Current Links ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to US49978503P priority Critical Application filed by EpiTactix Pty Ltd filed Critical EpiTactix Pty Ltd Priority to PCT/AU2004/001184 priority patent/WO2005022580A1/en Priority to US10/570,310 priority patent/US20060284282A1/en Assigned to EPITACTIX PTY LTD. Original Assignee EpiTactix Pty Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Abandoned Application number US10/570,310 Inventor Shaun Cunningham Current Assignee (The listed assignees may be inaccurate.
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Google Patents Heterjunction bipolar transistor with tunnelling mis emitter junctionĭownload PDF Info Publication number US20060284282A1 US20060284282A1 US10/570,310 US57031006A US2006284282A1 US 20060284282 A1 US20060284282 A1 US 20060284282A1 US 57031006 A US57031006 A US 57031006A US 2006284282 A1 US2006284282 A1 US 2006284282A1 Authority US United States Prior art keywords layer emitter base rare earth earth oxide Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.
Google Patents US20060284282A1 - Heterjunction bipolar transistor with tunnelling mis emitter junction US20060284282A1 - Heterjunction bipolar transistor with tunnelling mis emitter junction
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